The growth processes of Tetragonal Single Crystals of solid solution (Cd0. 6Zn0. 32Mn0. 08)3As2, space group P42/nmc, has been synthesized by Bridgman method. Conductivity and magnetoresistance of (Cd0. 6Zn0. 32Mn0. 08)3As2 were measured in the range 1. 6K to 300K and in magnetic field up to 25 T. Crossover from Mott variable-range-hopping conductivity mechanism close to helium temperatures. In this work, we found the width of the coulomb D = 0. 21 meV and a rigid gap δ = 0. 026 meV in the density of localized states, concentration and localization radius of charge carriers.

Single Crystals of poly(ethylene glycol) (PEG)-b-polystyrene (PS), PEG-bpoly( methyl methacrylate) (PMMA), PEG-b-polycaprolactone (PCL), and polyaniline (PANI)-b-PEG-b-PANI were developed from dilute solutions and thin molten films using self-seeding methodology. The PS and PMMA grafted chains were categorized in disordered nano-brushes; however, the PCL and PANI ones were grouped in ordered nano-brushes. The characteristics of grown Single Crystals such as surface morphology, growth planes, and thicknesses were investigated using Atomic Force Microscopy (AFM), Electron Diffraction (ED) in Transmission Electron Microscopy (TEM), and Small Angle X-ray Scattering (SAXS). The thickness of PEG substrates, as well as polymer nano-brushes, were in the nanoscale (2-150 nm). Furthermore, the special morphologies of polymer mixed-brushes developed through the growth of Single Crystals of PEG-b-PS and PEG-b-PMMA diblock copolymers were introduced and characterized. Regardless of different morphologies, the total, substrate and amorphous thicknesses, tethering density as well as ED patterns were compatible in the phase regions covered by similar nano-brushes.

Cd0.96Zn0.04Te Crystals were grown using vapor phase gas transport method (VPGT). The results show that dendritic Crystals with grain size up to 3.5 mm can be grown with this technique. X-ray diffraction and Laue back-reflection patterns show that dendritic Crystals are Single-phase, whose Single crystal grains are randomly oriented with respect to the gas-transport axis. Electrical measurements, carried out using Van der Pauw method, show that the as-grown Crystals have resistivity of about 104 Ω cm and n-type conductivity.

Quantum computers have much more computing power than classical computers and this has created a challenge in the field of public-key cryptography algorithms, which is predicted quantum computers will reach the computational power to break existing public-key cryptography algorithms by 2030. To solve this problem, NIST published a call for post-quantum cryptography algorithms. Implementing these algorithms faces challenges such as execution time and resources. One of the algorithms that made it to the third round is the Crystals-KYBER algorithm. In this algorithm, by optimizing the NTT module, the execution time is reduced. Usually, the implementation of NTT is created with radix-2, but in the proposed method, radix-4 is used, and this reduces the execution time. Changes to NTT are required to implement radix-4 NTT. DIT is used to implement NTT and DIF is used to implement INTT. In NTT and INTT formulas changes are made to the twiddle factors and the values of the twiddle factors stored to the ROM. In the following, we compared radix-4 butterfly unit with radix-2 butterfly unit. By reusing results in CT and GS butterfly units, we need four multiplications, additions, and subtractions, and the structure of radix-4 butterfly unit is mentioned. The memory unit uses eight RAMs to increase read and write speeds, four of which are for writing and the remaining four are for reading. It is also necessary to make corrections to the NTT parameters which are suitable for implementation on Kyber. Next, we implemented the proposed method on two FPGA Artix-7 and Virtex-7 using Vivado software. In the implementation on Artix-7 and Virtex-7 in exchange for a slight increase in the resources, the execution time in Artix-7 is reduced by 28. 74% and 12. 34% compared to similar implementations.

The doping of Pb2SeTaO6 with Ge ferroelectrics was produced by a high-temperature solution method. We measure dielectric constant, dielectric loss and conductivity in the temperature range -30oC to 200oC and frequency range 1 to 100 KHz. The value of dielectric constant of the Pb2SeTaO6 (PST) crystal remained the same after thermal annealing whereas they decreased after Ge doping in the phase transition temperature range of the PST Single crystal. All samples were investigated for conductivity with increasing temperature.

In the present work, KTiOPO4 (KTP) Crystals have been grown by spontaneous nucleation technique in flux medium using K6P4O13 flux. Cooling rates of 0. 4-1 ° C/h were applied in the spontaneous nucleation process. The presence and amount of impurities has been determined by using X-Ray Fluorescence (XRF). The optical transmission spectra of impure KTP Crystals in the UV– Visible region are discussed. The transmission cut-off is clearly shown at the optical absorption edge, as well as the rapidly reduced absorption with increasing wavelength. It is shown that the presence of impurity shifts the absorption edge of KTP towards lower energy region. The wavelength dependence of absorption coefficient is determined in the UV– visible range, and the characteristics of the optical absorption edge are discussed. Results reveal that the absorption edge and the type of optical charge carrier transition can be attributed to indirect transition for these Crystals. It is shown that presence of impurity decreases the indirect band gap (Eg) of KTP Crystals, causing the indirect transition absorption edge to move towards lower energy. Also, structural characterization was carried out employing XRD and IR analysis, confirming the growth of KTP crystal.